GaN for Microwave Devices: Why using GaN?

Physical properties superior to GaAs and Si

  • High power density,
  • High breakdown voltage.

Johnson 's figure of merit

GaN HEMT allows:

  • Power, robustness, high linearity,
  • Wideband frequency coverage,
  • High voltage and high temperature operation.

Device output power as a function of frequency

GaN HEMT is useful in applications such as:

  • Airborne radars,
  • Electronic warfare,
  • Solid state transmitters,
  • Wideband sensors for advanced multi-function & multi-role systems,
  • Wireless communication networks,
  • Other Telecom & Space applications.

Discrete power HEMT