Solutions for Microelectronics and Photonics with III-V semiconductors and their integration with silicon

The III-V Lab masters all the technologies needed to fabricate the most advanced microelectronics and photonics semiconductor components (see our expertise) for your more demanding high speed and high power applications from microwave to optics requiring:

• High-speed and power transistors (GaN Gallium Nitride, InP Indium Phosphide),
• Optoelectronic sources (GaAs Gallium Arsenide, InP...),
• Optoelectronic detectors (GaSb Gallium antimonide, InP...),
• Photonic Integrated Circuits (InP, LNOI Lithium Niobate On Insulator...),
• Heterogeneous integration:
  • Advanced packaging,
  • III-V integration with silicon.

State of the art solutions at all steps of your project

III-V Lab can support your projects from the earliest phase in Research & Development up to the production ramp-up with unique capabilities and competences at all steps of your project:

• Components design & multi-physics modeling :
  • Epitaxy materials engineering,
  • Thermo-mechanic modeling,
  • Electromagnetic modeling,
• Epitaxy and wafer fabrication :
  • III-V epitaxy up to 300mm wafers
  • 2 to 4 inches III-V wafers front-end,
  • III-V integration with 200-300mm silicon wafers
• Wafer back-end and test
• Packaging

A support under different kinds of cooperation

Our unique business model of Industrial Laboratory will enable you to get fast proof of concepts in R & D mode. When the concepts needs to be evaluated in a much industrial way a Pilot Line approach can be adopted in order to support small to medium size productions for niches markets or ramping up applications. And when mass production is foreseen, we can manage technology transfer to industrial partners.